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ARF1019
Features
- 81 - 86 GHz Power Amplifier MMIC
- 32 dBm Saturated Output Power
- 15% PAE
- 24 dB Small-Signal Gain
- 17 dB Input and Output Return Loss
- 38 dBm Output IP3
- 4.0 V, 2.0 A Nominal Quiescent Bias
- Die Size 3.5 × 4.1 × 0.05 mm
Specifications
- Min. Frequency (GHz) 81
- Max. Frequency (GHz) 86
- Gain (dB) 24
- Psat (dBm) 32
- OIP3 (dBm) 38
- Bias Voltage (V) 4
- Bias Current (mA) 2000
- Input Return Loss (dBm) 17
- Output Return Loss (dBm) 17
- Package Bare Die
Download Datasheet
More information
ARF1019 is a high linearity gallium arsenide E-band power amplifier designed for high bandwidth applications. With 32 dBm output power and 24 dB linear gain, it is well suited for high capacity radio systems. The part is pre-matched to 50 Ω with an integrated, high dynamic range and temperature compensated power detector. RF ports are AC coupled and the device is ESD protected to simplify handling and assembly.
The part is RoHS* compliant and built with the latest manufacturing techniques to optimize for reliability and quality control.
Export from The Netherlands/EU, dual-use, end-use statement required.
Applications
- Telecommunications
- Satcom
- Test and Measurement
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Questions & Additional Support
For more information on a specific product or requirement, please contact [email protected] or visit our contact page.
High Frequency Design Expertise
The Altum RF designers have many years of expertise in GaAs and GaN high frequency design. Successful track record on design and development of catalog products and custom MMIC from 1 GHz to beyond 100 GHz.
Full Service
Altum RF is a component supplier of catalog products or custom products. We take care of the full supply chain. Products are tested and qualified according to JEDEC standards.
Customer Focus
Everything we do at Altum RF is focused on supporting our customers. With dedicated applications engineers we will support our customers during the design-in phase. A global network of sales representatives is in place to be close to the customer.
