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ARF1014
Features
- 27 - 31.5 GHz GaN Power Amplifier MMIC
- 12 W Saturated Output Power
- 21% PAE
- 25 dB Small-Signal Gain
- >10 dB Input and Output Return Loss
- 37 dBm Linear Output Power with IMD < -22 dBc
- 19 dB Linear Power Gain
- Die Size: 3.00 × 3.40 × 0.10 mm
Specifications
- Min. Frequency (GHz) 27
- Max. Frequency (GHz) 31.5
- Gain (dB) 25
- Psat (dBm) 41
- Bias Voltage (V) -1.95/24
- Bias Current (mA) 280
- Package Bare Die
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More information
ARF1014 is a monolithic 27 to 31.5 GHz power amplifier die fabricated in a GaN-on-SiC process technology. It achieves 12 W saturated output power with 21% PAE. With 5 W linear power (IMD < -22 dBc) and 19 dB of associated linear power gain it is well suited for satcom terminals and other Ka-band applications. Input and output ports are internally matched to 50 Ω. ARF1014 is 100% on-wafer DC and RF tested. The part is RoHS* compliant and built with the latest manufacturing techniques to optimize for reliability and quality control. Export from the Netherlands/EU, dual-use, end-use statement required.
Applications
- Satcom
- Telecommunications
- Instrumentation
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Questions & Additional Support
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High Frequency Design Expertise
The Altum RF designers have many years of expertise in GaAs and GaN high frequency design. Successful track record on design and development of catalog products and custom MMIC from 1 GHz to beyond 100 GHz.
Full Service
Altum RF is a component supplier of catalog products or custom products. We take care of the full supply chain. Products are tested and qualified according to JEDEC standards.
Customer Focus
Everything we do at Altum RF is focused on supporting our customers. With dedicated applications engineers we will support our customers during the design-in phase. A global network of sales representatives is in place to be close to the customer.
