(EINDHOVEN, THE NETHERLANDS) December 16, 2020 – Altum RF, a supplier of high-performance RF to millimeter-wave semiconductor solutions for next generation markets and applications, announces a two-year contract with European Space Agency (ESA) under the ARTES Advanced Technology programme to design and develop gallium nitride (GaN) Ka-band high power amplifiers for very small aperture terminals (VSATs). This contract with ESA is supported by Netherlands Space Office (NSO).
Starting in January 2021, the project objective is to develop Ka-band high-efficiency power amplifiers, using a cost-effective package solution. These high power amplifiers are well suited for VSATs, two-way ground stations that transmit and receive data from satellites. Based in Eindhoven, The Netherlands, Altum RF, is an ideal match for this project due to its European headquarters.
“We are excited to announce this strategically-aligned project with ESA that will further strengthen our product growth and development plans over the next two years,” stated Greg Baker, Altum RF CEO. “This contract award also establishes the confidence ESA shows in our innovative design and solid execution capabilities, and we look forward to collaborating with them.”
Niels Kramer, Altum RF Managing Director Europe and Vice President Marketing, added, “From a highly-respected organization, the ESA contract recognizes the GaN design capabilities Altum RF has demonstrated and allows us to continue expanding our design and development activities in the Eindhoven office.”
Elodie Viau, Director of Telecommunication and Integrated Applications, ESA says: “The ARTES Advanced Technology programme is dedicated to the innovative technological development of the satcom industry and its applications. We are delighted to be able to assist Altum RF in developing this ground equipment – which represents a very promising new technology for future and evolving space-based telecommunication services.”
