ARF1207

Features

57 - 71 GHz LNA/Driver/Medium Power Amplifier
24 dB Gain
23 dBm P1dB Output Power
5 dB Noise Figure
> 10 dB Input and Output Return Loss
4 V, 250 mA Nominal Bias for Power Performance
3 V, 200 mA Nominal Bias for Low-Noise Performance
2.15 mm × 1.35 mm × 0.05 mm Die
Single gate and single drain supply, from either side

Specifications

Min. Frequency (GHz) 57
Max. Frequency (GHz) 71
Gain (dB) 24
P1dB (dBm) 23
Bias Voltage (V) 4
Bias Current (mA) 250
Package Bare Die

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More information

ARF1207 is a linear, low-noise, medium power, high gain amplifier for V-band applications. The part is pre-matched to 50 Ω and is ESD protected to simplify handling and assembly. The multistage amplifier has a single gate and single drain supply which can be connected from either side of the die for ease of use.

The part is RoHS* compliant and built with the latest manufacturing techniques to optimize for reliability and quality control.

Export from The Netherlands/EU, dual-use, end-use statement required.

Applications

IEEE 802.11ad and 802.11ay Radios
ISM
Test and Measurement

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High Frequency Design Expertise

The Altum RF designers have many years of expertise in GaAs and GaN high frequency design. Successful track record on design and development of catalog products and custom MMIC from 1 GHz to beyond 100 GHz.

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Altum RF is a component supplier of catalog products or custom products. We take care of the full supply chain. Products are tested and qualified according to JEDEC standards.

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