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ARF1109Q4

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Features

  • 8 - 12 GHz Amplifier
  • 30 dBm Saturated Output Power
  • 40% PAE
  • 26 dB Power Gain
  • 8 V, 300 mA Quiescent Bias
  • 4 mm × 4 mm QFN Package

Specifications

  • Min. Frequency (GHz) 8
  • Max. Frequency (GHz) 12
  • Gain (dB) 29
  • P1dB (dBm) 30
  • Psat (dBm) 31
  • Bias Voltage (V) -0.7/8
  • Bias Current (mA) 300
  • Package 4 x 4

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More information

ARF1109Q4 is a 1.0 watt amplifier in a 4×4 QFN package for X-band applications. With 26 dB power gain, 29 dB of small-signal gain, 1 W saturated output power, and 40% power-added efficiency, the device is ideal for pulsed or CW radar applications, as well as telecommunications and test and measurement systems. The part is pre matched to 50 Ω and external bias circuitry is required for operation.
The device is ESD protected to simplify handling and assembly.

The part is RoHS* compliant and built with the latest manufacturing techniques to optimize for reliability and quality control.

Export from The Netherlands/EU, no licence.

Applications

  • Radar
  • Telecommunications
  • Test and Measurement

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High Frequency Design Expertise

The Altum RF designers have many years of expertise in GaAs and GaN high frequency design. Successful track record on design and development of catalog products and custom MMIC from 1 GHz to beyond 100 GHz.

Full Service

Altum RF is a component supplier of catalog products or custom products. We take care of the full supply chain. Products are tested and qualified according to JEDEC standards.

Customer Focus

Everything we do at Altum RF is focused on supporting our customers. With dedicated applications engineers we will support our customers during the design-in phase. A global network of sales representatives is in place to be close to the customer.