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ARF1002C7
Features
- 8 - 11 GHz Power Amplifier
- 10 W Saturated Output Power
- 40% PAE
- 24 dB Small-Signal Gain
- 20 dB Power Gain
- >10 dB Input and Output Return Loss
- 8 V, 2.8 A Nominal Bias (pulsed)
- 7 mm × 7 mm QFN Package
Specifications
- Min. Frequency (GHz) 8
- Max. Frequency (GHz) 11
- Gain (dB) 24
- P1dB (dBm) 38
- Psat (dBm) 39
- Bias Voltage (V) -5/8
- Bias Current (mA) 2800
- Package 7 x 7
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More information
The ARF1002C7 is a two stage GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier in an air-cavity surface-mount ceramic package and designed for a variety of X-band applications. The operating frequency ranges from 8 to 11 GHz. The saturated pulsed output power is 40 dBm and the small signal gain is 24 dB. The part is internally matched to 50 Ω. The part can be auto-biased using a –5 V reference voltage, or direct-biased for variable bias control. RF ports are AC coupled.
The part is RoHS* compliant and built with the latest manufacturing techniques to optimize for reliability and quality control.
Export from The Netherlands/EU, dual-use, end-use statement required.
Applications
- Test & Measurement
- Radar
- Satellite Communication
- Wireless Networks
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Questions & Additional Support
For more information on a specific product or requirement, please contact [email protected] or visit our contact page.
High Frequency Design Expertise
The Altum RF designers have many years of expertise in GaAs and GaN high frequency design. Successful track record on design and development of catalog products and custom MMIC from 1 GHz to beyond 100 GHz.
Full Service
Altum RF is a component supplier of catalog products or custom products. We take care of the full supply chain. Products are tested and qualified according to JEDEC standards.
Customer Focus
Everything we do at Altum RF is focused on supporting our customers. With dedicated applications engineers we will support our customers during the design-in phase. A global network of sales representatives is in place to be close to the customer.
